Explore the entire carrier density or resistivity profile in a silicon device. Measurement range covers state-of-the art application needs. Designers can check how closely their models represent actual fabricated devices. Yield Enhancement Engineers can “fingerprint” a fabrication process for easy failure analysis. Process Engineers can troubleshoot all silicon doping operations, including: epi, ion implantation, and diffusion.SRP-2100_300x_0

Measured parameters:
  • Dopant concentration and resistivity
  • Carrier, resistivity and dopant shape
  • Junction depth
  • Transition width
  • Profile shape
  • Sheet resistance
  • Oxide thickness
  • Electrically activated dose
  • GaAs and other compound semiconductors, AlGaN/GaN HEMT structures and SiC

Options:

  • Bevel Angel Measurement (BAM): a laserbased sensor that allows the high precision measurement of the actual bevel angle of the samples for exact depth profiling.
  • Shallow Layer Measurement (SLM): Extending the SRP technique to layers thinner than 150 nm. The minimum practical limit using current techniques, as verified by SIMS, is on the order of 25 nm.
  • Variable Probe Spacing (VPS): based on motorized probe spacing movement allows the measurement of sheet resistance of thin isolated layers.
  • PCIV option for wide bandgap semiconductors: combines variable measurement bias and current-voltage curve analysis to measure spreading resistance profile novel semiconductor materials.
  • Signal Tower: standard industrial signal tower which informs the operator about the system status.
  • Stand-Alone Bevel sample polishing unit