The SIRM-300 Scanning Infrared Microscope is a non-contact, non-destructive, optical instrument, which provides a complete characterization of bulk micro defects (BMDs) such as oxide and metal precipitates, stacking faults, dislocations, slip lines and voids in bulk silicon and in the denuded zone (DZ). GaAs and InP semiconductor materials can also be measured by the SIRM-300. Since reflective confocal scanning microscopy is used, the specimen can be a standard, one side polished wafer.

Key Featuressirm-300_KKA5336 - Version 2_0

  • Non-contact, non-destructive analysis
  • No sample preparation is needed
  • Image collection in X-Y and X-Z planes
  • Measurement of epi wafers
  • 300 mm measurement capability

BMD characterization:

  • DENUDED ZONE DETERMINATION
  • STACKING FAULT
  • DISLOCATIONS
  • METAL PRECIPITATION