Our RIE systems provide unrivalled flexibility for R&D use and pilot production

Reactive Ion Etching (RIE) is a simple operation, and an economical solution for general plasma etching. The substrate is usually placed on a quartz or graphite “coverplate” to avoid sputtering/re-deposition of electrode material and gas is injected into process chamber via “showerhead” gas inlet in the top electrode. Negative self-bias forms on lower electrode and a single RF plasma source determines both ion density and energy.

Multiple choices of etch processes:RIE-273x300

  • Chemical etch – isotropic, fast rate
  • Ion induced etch – anisotropic, medium rate
  • Physical etch – anisotropic, slow rate
  • Wide applications in semiconductor de-processing and failure analysis

A wide range of materials can be etched, including:

  • Dielectric materials (SiO2, SiNx, etc.)
  • Silicon-based materials (Si, a-Si, poly-Si)
  • III-V materials (GaAs, InP, GaN, etc.)
  • Sputtered metals (Au, Pt, Ti, Ta, W, etc.)
  • Diamond-like carbon (DLC)

Features of the PlasmaPro RIE product family

Feature PlasmaPro 80 RIE PlasmaPro 800 RIE PlasmaPro 100 RIE
Electrode Size 240mm 460mm 240mm
Loading Open Load Load Locked
Substrates See product brochure 200mm with carriers options available for multi-wafers or small pieces
MFC controlled gaslines 8 or 12 line gas box available
Wafer stage temperature range 10-80°C -20°C to 80°C
He Back side cooling option Yes No Yes
ICP Option Yes No Yes
Focused Plasma Yes No