Ion beam etching (IBE)
Ion beam technology allows thin films to be deposited or etched by the use of broad beams of positively charged ions in a high vacuum system.
For etching, the ion beam is directed at the substrate to be patterned. For deposition, an ion beam strikes and sputters a target of material, which then coats the substrate tilted toward the target with the sputtered material. The properties of the deposited film will depend on the target material properties and on the ion sputter beam parameters (flux, energy, etc.) as well as the chamber ion source-target-substrate configuration.
Benefits of IBE:
- Allows beam energy and ion flux to be independently controlled
- Process takes place in a lower pressure working environment
- Produces anisotropic etching
- Provides means for all known materials to be etched
- Allows profile/sidewalls control thanks to a variable etch beam angle relative to sample surface features
|Ion etch source||150mm or 300mm|
|Etch area||Up to 200mm|
|Platen speed||Up to 20rpm|
|Platen tilt angle||-90ºC to +75 ºC1|
|Platen heat||Embedded heaters up to 300ºC|
1. If SIMS is used, platen tilt angle becomes -90ºC to +35 ºC