Semilab offers various solutions for characterization of dielectric layers.

Our VQ measurement can be used in the WT-2000, WT-2500 and WT-3000 platforms. It can measure the following properties:

  • Tox  Electrical oxide thickness
  • Vfb Flatband voltage
  • Dit Interface state density
  • Qm Mobile charge
  • Vox Oxide voltage
  • Qeff Effective charge
  • Etunnel Tunneling electric field
  • Vs Surface potential
  • Vsurf Surface voltage
  • Vtunnel Tunnel voltage

Semilab SDI’s SL (scribe line) technology is the first and only non-contact electrical C-V & I-V measurement system capable of measuring on product wafers. Measurements can be made in  scribe line test sites as small as 30micron x 30micron, or in the active cell area. Cell measurements allow for the first time in-line electrical monitoring of topology related processing issues. Major applications include measurements of SiO2, nitrided oxides, advanced high-K and low-K dielectrics.

Semilab SDI’s patented SASS technology provides non-contact I-V measurements, over a range of ~3 orders of magnitude of leakage current. The unique approach allows the user to separately probe valence band / and conduction band offsets, obtaining additional information not accessible by traditional MOS techniques. Used in conjunction with non-contact stressing, SDI’s patented SILC method also allows for no contact evaluation of GOI and film wearout.

Semilab SDI’s proprietary time resolved C-V measurement technique creates a precise, leakage corrected C-V plot in 1-2 minutes. Smart software automatically extracts the dielectric charge and interface parameters, and the approach has been demonstrated on advanced, ultra thin dielectrics as low as 6Å. The corona based technique provides capabilities exceeding those of traditional MOS measurements: EOT extraction is performed using a unique simulation method which provides accurate data over a wide variety of dielectrics and interface properties. The patented Q-Q method for interface state density analysis provides a quazistatic distribution of traps with the silicon band gap.

Semilab SDI’s COCOS and Mobile Charge technologies utilize full wafer corona charge deposition to control the dielectric field, and provide non-contact, real-time replacement of traditional MOS C-V testing for production tool monitoring. The patented mobile charge measurement allows full wafer mapping – essential for contamination control, with quantitative determination of Na and Cu concentrations.

 

SurfaceWave technology
The Semilab AMS 3300 uses the exclusive SurfaceWave™ technology to measure the thickness and uniformity of thin film metals and dielectrics. It’s a low cost but powerful product built expressly for copper, low k materials.

The 3300 delivers high-throughput, non-contact, non-destructive measurements of the thickness and uniformity of metal line arrays and pads for all copper/low-k processes. The 3300 is capable of incredible speed and accuracy at the 65 nm node and lower for maximum scalability and the lowest cost of ownership in its class.

 

Ellipsometry Porosimetry (EP)  measures the change of the optical properties and thickness of the materials during adsorption and desorption of a volatile specie either at atmospheric pressure (EPA) or under reduced pressure depending on the application (EP). The EP technic is unique by its ability to measure porosity of very thin films down to 10nm, reproducibility and its speeds of measurement. Compares to traditionnal Porosimeter, Ellipsometer porosimeters is well suited for very thin film pore size and pore size distribution measurement. Film porosity is a key factor in Silicoin based technology using low k materials, organic industry (encapsulated OLED\’s) as well as in the coating industry using SolGel technics.